We have demonstrated a RLC matched GaN HEMT power amplifier with 12 dB gain, 0.05-2.0 GHz bandwidth, 8 W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic S08 package and contains a GaN on SiC device operating at 28 V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48 V operation and 15 W CW power over the same band, obtains over 20 W under pulsed condition with 10% duty cycle and 100 mus pulse width. CW measurements are pending after assembly in an alternate high power package. These amplifiers are suitable for use in wideband digital cellular infrastructure, handheld radios, and jamming applications.
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Krishnamurthy et al. (2008) studied this question.
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