SIPOS deposited rapidly at atmospheric pressure (AP) is different from SIPOS deposited more slowly at low pressure (LP). The transmission infrared spectra of the AP and LP SIPOS films can be different for the same oxygen content. We interpret our infrared data for AP SIPOS in terms of a statistical model for the bonding of silicon and oxygen that predicts less than 1% character [ tetrahedra] for the AP SIPOS. The LP SIPOS films have more character than the AP SIPOS. We believe this arises from the slower deposition rate for LP SIPOS where oxygen can preferentially bond to an already oxygen‐bonded Si. Stress measurements and reactivity to HF for LP SIPOS films correlate with the infrared data and are consistent with our interpretation of the infrared data.
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Knolle et al. (1980) studied this question.