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A single-photon avalanche diode with an active quenching circuit fabricated in 130 nm CMOS technology achieves a 185 MHz count rate and 139 dB dynamic range, with distinct saturation behaviors at high photon rates. Novelty: ClaimNovelty.METHODOLOGICAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

April 18, 2024Open Access

185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology

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Abstract

Single-photon avalanche diodes with active and passive quenching circuits are fabricated on a 130 nm CMOS platform and analyzed with respect to saturation behavior at high photon rates.

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Eisele et al. (2024) studied this question.

synapsesocial.com/papers/6a20af73f778797513eb85c3 https://doi.org/10.60928/w126-7olb

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Abstract

Single-photon avalanche diodes with active and passive quenching circuits are fabricated on a 130 nm CMOS platform and analyzed with respect to saturation behavior at high photon rates.

185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology

Abstract

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Cite This Study

185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology

Abstract

Discussion

Cite This Study

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