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September 27, 2018Scientific ReportsOpen Access

Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

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Authors

DLDesmond JiaJun LoyNanyang Technological UniversityPDPutu Andhita DananjayaNanyang Technological UniversityXHX. HongGuilin University of Electronic Technology

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Loy et al. (2018) studied this question.

synapsesocial.com/papers/6a20b29ae2a660d176234a74https://doi.org/10.1038/s41598-018-33198-0
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