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This work presents a broadband SiGe Power Amplifier (PA) for operation between 60–90 GHz covering both 71–76 GHz and 81–86 GHz E-Band sub-bands. It consists of a two-stage differential cascode amplifier using an LC-interstage matching network in the interface between the stages. Single-ended to differential conversion is accomplished by the use of two stacked 1-to-1 transformers, achieving a simulated insertion loss of 0.63 dB and 0.45 dB at input and output, respectively. The design has been implemented using Infineon B7HF200 0.18 pm SiGe HBT process with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> 200/250 GHz. Measured performance indicates that the PA delivers 12.6 dBm saturated output power (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf> ) with 4.6% peak Power Added Efficiency (PAE) at 84 GHz while providing at least 6 dB of gain covering a frequency range from 62 to 90 GHz. The circuit consumes 102 mA from a 2.8 V power supply and occupies an area of 0.105 mm 2 .
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Carmona et al. (2015) studied this question.
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