Simulation of an indium gallium nitride quantum well light‐emitting diode with the non‐equilibrium Green's function method

This work presents a quantum mechanical simulation of an indium gallium nitride (InGaN) based light‐emitting diode (LED) using the non‐equilibrium Green's function (NEGF) method. Due to the wurtzite crystal structure, such LEDs exhibit strong polarization‐induced electric fields at heterointerfaces. Standard simulation methods based on the drift‐diffusion (DD) model do not take into account potentially important transport mechanisms such as quantum mechanical tunneling or non‐equilibrium carrier distributions in the device. These effects are included in the NEGF model, while the semi‐classical models employ parametrized approximations. In principle, the NEGF simulation therefore allows a more realistic view of the physical process that take place in the LEDs.