Key points are not available for this paper at this time.
Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms (Dyakonov-Perel and Rashba) are comparable in efficiency. It is demonstrated that for the quantum well grown along the 001 direction, the main axes of spin relaxation rate tensor are 110 and 110.
Averkiev et al. (Wed,) studied this question.