Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms (Dyakonov-Perel and Rashba) are comparable in efficiency. It is demonstrated that for the quantum well grown along the [001] direction, the main axes of spin relaxation rate tensor are [110] and [110].
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Averkiev et al. (1999) studied this question.
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