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The band structure of medium-gap semiconductors GaAs and InP is described theoretically using a five-level k model and including far-level contributions as well as polaron effects. A corresponding theory is also developed to describe orbital and spin properties of charge carriers in both materials in the presence of an external magnetic field of arbitrary orientation. Field dependence of g factors, the spin doublet splittings of the cyclotron resonance, bands' anisotropies, and the energy dependences of the cyclotron masses are described and compared with existing experimental data all the way to the megagauss range of magnetic fields. A good theoretical fit to all the experiments is achieved, which is used to determine the band parameters for GaAs and InP. Values of the polar constants for both materials are discussed. The determined band parameters are employed to calculate the hole masses, which turn out to be in agreement with those found by other authors. It is concluded that the proposed description is adequate for both the conduction and valence bands of GaAs and InP, although there remains a certain ambiguity between the band-structure effects (related to the far-level contributions) and the polaron effects. 1996 The American Physical Society.
Pfeffer et al. (Wed,) studied this question.