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Abstract MXene is an emerging 2D electronic material, which has attracted extensive attention in the fields of energy conversion and storage, electromagnetic shielding, and catalysis, etc . MXene has a wide range of types, and its abundant surface terminations and vacancy defects make it have a unique and adjustable electronic structure. Among them, oxygen vacancy ( V O ) regulation is considered to be one of the most effective methods. However, it mainly relies on natural defects caused by chemical etching in preparation leading to difficult control in V O contents. Here, an electrochemical method is proposed and successfully achieve regulation of V O within a certain range in Ti 3 C 2 T x MXene. This fact is that the V O stems from the elimination of partial ‒OH groups. It is further confirmed that the V O manipulation greatly increases its electrical conductivity (σ) from 1400 to 4052.3 S cm −1 , and is insensitive to Seebeck coefficient ( S ), resulting in a 4‐folds higher thermoelectric power factor ( S 2 σ) with good environmental stability. Systematic investigations including material structure, energy band, temperature dependence, etc ., are performed to explore the V O decoupling σ and S of V O ‐Ti 3 C 2 T x . This work provides a feasible strategy for the fabrication of high‐performance electronic MXene, such as thermoelectric energy harvesting.
Wan et al. (Tue,) studied this question.