We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al 2 O 3 layer in TiN 2 RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric-stack thinning allows lower forming current; (iii) `natural' (asymmetry-induced) reset switching takes place close to the TiN anode; (iv) reset resistance is limited by material-barrier properties at TiN interface.
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Goux et al. (2012) studied this question.
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