The switching dynamics of electrically driven insulator-to-metal transition (IMT) and metal-to-insulator transition (MIT) in vanadium dioxide are investigated. The transient response of time domain measurements are modeled using a domain based 2-D heterogeneous resistive network, taking into account local electronic potential and local Joule heating. It reveals, the switching time is dominated by a spatially non-uniform percolation of the metallic phase during the IMT driven by electro-thermal forces. We demonstrate an IMT switching time of 793ps in scaled VO 2 devices and project IMT and MIT switching speed for scaled devices.
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Jerry et al. (2016) studied this question.
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