Measurements of the anisotropy of the dislocation resistivity in Au, Ag, and Cu

The anisotropic resistivity of dislocations produced by deformation is measured in high purity Au, Ag, and Cu single crystals at liquid helium temperature. Resistivities along the direction perpendicular to the slip plane are found to be greater than those parallel to the slip plane. The ratio Δ ϱ⟂ /Δ ϱ∥ (where Δ ϱ⟂ and Δ ϱ∥ are the resistivity increments along directions perpendicular and parallel to the slip plane, respectively) is nearly constant in the easy glide region (stage I). For the crystals of Au, Ag, and Cu used here this ratio is 2.28, 2.88, and 2.32, respectively, while in the rapid‐hardening region (stage II) this ratio decreases rapidly to unity with increasing deformation. Comparing these values with the theory of Seeger and Bross, it is concluded that the stacking‐fault resistivity of an extended dislocation is relatively small compared with the resistivity due to the strain field around an edge dislocation and amounts to only 3% of the strain field resistivity in Au, 15% in Ag, and 12% in Cu.