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The motion of naturally occurring vacancies on Si(001)-(2×{}1) has been investigated in real time with scanning tunneling microscopy, using a novel method in which repeated line scans are displayed in the form of a time-versus-position pseudoimage. Individual jumps of the vacancies are resolved. Vacancy diffusion is one dimensional along the dimer row. An activation energy of 1.7±{}0.4 eV has been measured for the diffusion of the single dimer vacancy.
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Kitamura et al. (1993) studied this question.
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