We measure the tunneling conductance ( G) and current-voltage ( I-V) characteristics for electron tunneling from a bulk doped-GaAs normal metal into the abrupt edge of a fractional quantum Hall effect. We observe clear power law behavior for both the I-V relationship and the conductance versus temperature. For tunneling into the ν0ex0ex=0ex0ex1/3 edge the power law persists for one decade in V ( T), and 2.7 (1.7) decades in I ( G). This strongly indicates the 1/3 edge behaves like a chiral Luttinger liquid. In contrast, the ν0ex0ex=0ex0ex1 edge is essentially linear, while the 2/3 edge is slightly nonlinear.
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Chang et al. (1996) studied this question.
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