BEEM spectroscopy has been used to characterize hot-carrier transport through AlAs/GaAs heterostructures. The dependence of electron transmission on AlAs thickness has been directly measured, and the position of the AlAs L₁ minima, which has been subject to some uncertainty in the past, has been determined. First-principles transmission calculations, based on a tight-binding formalism, are compared to the results of BEEM spectroscopy.
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Kaiser et al. (1993) studied this question.
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