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In n-type GaN grown by metalorganic chemical vapor deposition two new electronic defects were detected and characterized by deep level transient spectroscopy (DLTS). Schottky-barrier diodes with Ohmic back contacts and low series resistance were fabricated in GaN layers grown on sapphire. The diodes display well behaved current-voltage and capacitance-voltage characteristics and permit unambiguous DLTS evaluation. The new deep levels display thermal activation energies for electron emission of 0.49 and 0.18 eV.
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Götz et al. (1994) studied this question.
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