Pentacene field-effect transistors on plastic films operating at high temperature above 100°C

We have manufactured pentacene field-effect transistors (FETs) on polyimide base films with polyimide gate dielectric layers, and characterized electronic performance and surface morphology with application of heat in the temperature range from 30to210°C. It is found that mobility of pentacene FETs is enhanced from 0.27to0.71cm2∕Vs when measurement temperatures varies from 30to160°C under light-shielding nitrogen environment. To investigate postannealing effects, we have measured transfer curves at 30°C after many heat cycles at various temperatures. Mobility is almost constant even after annealing at 130°C, showing the excellent stability of the present device at high temperatures.