A method for calculating compositional variations of energy bands of ternary alloy semiconductors based on the coherent-potential approximation is presented. A generalized, Soven-type equation in a matrix form is derived and then solved by subsequent iterations. Zeroth-order approximation for band-gap energies is taken from the virtual-crystal approximation. The nonlinear dependence of the energy upon the alloy composition at various symmetry points within the first Brillouin zone is calculated for GaAs_1-xPₓ and GaₓIn_1-xP crystals. Significant band bowing has been found in both cases. The theoretical results are compared with experimental data available for these systems.
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Bugajski et al. (1983) studied this question.
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