The method of the force‐force correlation functions is used to derive, beyond the weak scattering approximation, a tractable approximative formula for the electrical resistivity of disordered binary alloys. The starting point is a one‐particle expression for the resistivity formulated in terms of the total scattering operator T . The local approximation is introduced by replacing the T operator by the atomic t matrices in order to treat transition metal alloys described by muffin‐tin single‐particle Hamiltonians. Short‐range multiple‐scattering corrections to the local approximation are evaluated using a non‐selfconsistent single‐site average‐ t ‐matrix approximation. Explicit results are given and discussed for the resistivity of a one‐dimensional muffin‐tin model for transition‐metal‐like alloys with resonant states.
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Goedsche et al. (1979) studied this question.
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