Drift Mobilities in Semiconductors. II. Silicon

The drift mobility of holes in n-type silicon and electrons in p-type silicon has been measured as functions of impurity concentration and temperature. In single crystals of resistivity greater than 10 ohm-centimeter, the mobility at 300^∘{}K of holes is μP=500±50 cm²/volt-sec and of electrons is μN=1200±100 cm²/volt-sec. For this high-resistivity material, the temperature dependence of mobility in the same units is μN=5.5×10⁶T^-1.5 and μP=2.4×10⁸T^-2.3.