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The drift mobility of holes in n-type silicon and electrons in p-type silicon has been measured as functions of impurity concentration and temperature. In single crystals of resistivity greater than 10 ohm-centimeter, the mobility at 300^ of holes is =50050 cm^2/volt-sec and of electrons is ₍=1200100 cm^2/volt-sec. For this high-resistivity material, the temperature dependence of mobility in the same units is ₍=5. 510^6T^-1. 5 and =2. 410^8T^-2. 3.
M. B. Prince (Mon,) studied this question.