Built-in self-test in multi-port RAMs

The authors present a novel approach to the test of multi-port RAMs. A novel fault model that takes into account complex couplings resulting from simultaneous access of memory cells is used in order to ensure a very high fault coverage. A novel algorithm for the test of dual-port memories is detailed. This algorithm achieves O(n) complexity thanks to the use of some topological restrictions. The authors also present a novel built-in self-test (BIST) scheme, based on programmable schematic generators, that allows great flexibility for ASIC (application-specific integrated circuit) design.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>