Theoretical study of InN/GaN short period superlattices to mimic disordered alloys

We carried out ab initio calculations of the (InN)n∕(GaN)m short period superlattices using the LDA-1/2 method in order to obtain approximate quasiparticle electronic structures. We performed calculations for several short period superlattices respecting the concentrations of 33%, 50%, 66%, and 80% of InN, considering different straining possibilities due to lattice mismatches. For the majority of configurations, we find relevant changes on the valence and conduction profiles around bandgap with position plane-by-plane along the superlattices growth direction, with the presence of intrinsic electric fields in the materials, in the case, when strain is applied. Our results show that for small numbers n and m of layers, the band edge states extend over the entire superlattice. For larger n and/or m, the edge states tend to localise on particular subtype layers (InN or GaN). For the former cases, the bandgaps are very close to the random alloys with the same concentrations, providing potential good materials for optoelectronic devices based on nitrides.