Research on phase change chalcogenide materials and Phase Change Memory (PCM) devices, is increasing and the recent proposals of alternative applications of PCM such as emulating the biological synapse in future bio-inspired computing systems has led to the need of fast, versatile and accurate solutions for advanced electrical characterization. In this paper, we introduce a new automated test solution capable of handling the requirements of High Frequency (HF) pulses, and DC resistance measurement used to characterize chalcogenide material integrated at the cell level. Improvement in measurement of SET and RESET threshold voltages is confirmed due to increased stability of the access resistance. The improved accuracy of the test system and its ability of fast statistical screening per wafer allow for appropriate characterization of the PCM for both conventional memory applications, and upcoming synaptic plasticity applications.
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Toffoli et al. (2012) studied this question.