Technology challenges for integration near and below 0.1 μm

Technology challenges for silicon integrated circuits with a design rule of 0.1 /spl mu/m and below are addressed. We begin by reviewing the state-of-the-art CMOS technology at 0.25 /spl mu/m currently in development, covering a logic-oriented processes and dynamic random access memory (DRAM) processes. CMOS transistor structures are compared by introducing a figure of merit. We then examine scaling guidelines for 0.1 /spl mu/m which has started to deviate for optimized performance from the classical theory of constant-field scaling. This highlights the problem of nontrivial subthreshold current associated with the scaled-down CMOS with low threshold voltages. Interconnect issues are then considered to assess the performance of microprocessors in 0.1 /spl mu/m technology. 0.1 /spl mu/m technology will enable a microprocessor which runs at 1000 MHz with 500 million transistors. Challenges below 0.1 /spl mu/m are then addressed. New transistor and circuit possibilities such as silicon on insulator (SOI), dynamic-threshold (DT) MOSFET, and back-gate input MOS (BMOS) are discussed. Two problems below 0.1 /spl mu/m are highlighted. They are threshold voltage control and pattern printing. It is pointed out that the threshold voltage variations due to doping fluctuations is a limiting factor for scaling CMOS transistors for high performance. The problem with lithography below 0.1 /spl mu/m is the low throughput for a single probe. The use of massively parallel scanning probe assemblies working over the entire wafer is suggested to overcome the problem of low throughput.