We describe Sb-rich reconstructions of nearly lattice-matched AlSb and GaSb (001) surfaces using scanning tunneling microscopy/spectroscopy and first-principles electronic structure calculations. Whereas AlSb reconstructs to an insulating c(4×4) surface like that of other III-V compounds, GaSb forms c(2×10) and (2×10) surfaces that are weakly metallic and violate the electron counting model. We attribute the differences to a competition between the energy gain from Sb-Sb bond formation and the cost from the increased surface stress (which depends on the elastic properties of the substrate).
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Whitman et al. (1997) studied this question.
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