We have designed, fabricated, and experimentally tested a high tuning-ratio MEMS-based tunable capacitor for RF communications applications. The tunable capacitor is made of single crystal silicon using anisotropic deep silicon etching techniques like the inductively coupled plasma (ICP). T _ he capacitor structure is subsequently released and sputter coated with a metal thin film for improved electrical performances. As application-determined parameters, the nominal base capacitance (unbiased) is designed to be between I pf and 5 pf, and the tun mg ratio has been demonstrated to be in excess of 300%.
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Yao et al. (1998) studied this question.