A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

Orner; Liu Liu; Rainey; Stricker; Geiss; Gray; Zierak; Gordon; Collins; Ramachandran; Hodge; Willets; Joseph Joseph; Dunn; Rieh; Jeng; Eld; Freeman; Ahlgren

doi:10.1109/bipol.2003.1274966

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Abstract

We present for the first time a very high performance SiGe HBT with f/sub T/ = 200 GHz and f/sub max/ = 280 GHz that has been successfully integrated with IBM's standard 0.13 /spl mu/m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

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synapsesocial.com/papers/6a2226c7965ac143884955f7 https://doi.org/10.1109/bipol.2003.1274966

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A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

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A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

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