A novel 0.5- mu m n/sup +/-p/sup +/ poly-gated salicide CMOS process

A novel salicided twin-tub 0.5- mu m CMOS process using germanium implantation is presented. n/sup +/ and p/sup +/ dopants are implanted after salicide formation to fabricate devices with low junction leakage and low silicide-to-diffusion contact resistance. Germanium implantation prior to silicide formation is used to control short-channel transistor characteristics. A significant reduction in the lateral n/sup -/ and p/sup -/ diffusion is observed for germanium-implanted LDD (lightly doped drain) MOSFETs, resulting in minimized overlap capacitance as well as improved short-channel behavior.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>