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Strain arising from differential thermal expansion may be used to compensate the effects of rising temperature and stabilize the operating properties of diode lasers. We have demonstrated this using a 1.58-/spl mu/m GaInAsP-InP multiquantum-well (MQW) laser mounted on a bimetallic heatsink, obtaining nearly complete stabilization of the modal wavelength and a threshold current equivalent characteristic temperature of 133 K over the temperature range of 20/spl deg/C to 70/spl deg/C. The results are successfully modeled by a gain calculation that considers the effects of strain produced by both lattice-mismatched epitaxy and external uniaxial stress.
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Cohen et al. (1997) studied this question.
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