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Developing a high-performance photodetector based on graphene technology is a significant challenge in the field of light sensors. In this work, photodetectors based on a graphene monolayer/Si3N4/Si heterojunction connected to an Ohmic and a Schottky back junction have been realized. The current-voltage characteristics in dark and under illumination conditions in the range from UV to IR have been carried out. Estimation of the figures of merit has demonstrated that, compared to other Si-based devices such as Bi2Te3/Si, InSb/Si, Gr/SiO2/Si and Gr/AlO3/Si, the graphene/Si3N4/n-silicon heterojunction coupled with a Schottky contact exhibits the best performance in terms of rectifying behavior, low dark current, a responsivity higher than unity and the specific detectivity and Noise Equivalent Power of 3 × 1012 Jones and 20 × 10−14 W/Hz1/2, respectively. Device performance has been studied by analyzing the electronic transport mechanisms involved, including the Thermionic, Ohmic, and Fowler-Nordheim mechanisms. Based on this approach, an estimation of the Schottky energy barrier of the graphene/Si3N4/n-silicon heterojunction reveals the tunability of the graphene Fermi level. The results demonstrate that this feature plays a crucial role in enhancing the photoresponse of graphene/n-Si-based devices, thereby facilitating the development of silicon technology for photodetection applications.
Bonavolontà et al. (Fri,) studied this question.