Anodized Aluminum Oxide Thin Films for Room‐Temperature‐Processed, Flexible, Low‐Voltage Organic Non‐Volatile Memory Elements with Excellent Charge Retention

A flexible organic non-volatile memory transistor on a 50 μm polyethylene naphtalate (PEN) substrate is presented. The gate and floating gate dielectric are prepared by potentiostatic anodization of aluminum, resulting in dense aluminum oxide high-k dielectric films. Such memory transistors show tuneable program and erase voltages and a large charge retention time. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.