Addressing of Optoelectronic Memory of Thin Film Zinc Porphyrin with Crossed 5 μm Indium Tin Oxide Arrays

We report here the preparation and characterization of an optoelectronic memory device based on a single layer of organic thin film (∼0.9 μm thick) of zinc octakis(β-decoxyethyl)porphyrin, sandwiched between two crossed indium tin oxide (ITO) arrays. The ITO lines in the array were 5 μm wide and were separated from each other by a 5 μm gap. Data (in the form of an electric charge) could be independently stored at and retrieved from an intersection of the crossed ITO lines with irradiation. Each intersection defined one memory pixel and there was no cross talk with nearby pixels under the test conditions, clearly demonstrating its potential application as an information storage device using a molecular thin film.