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Metal oxide semiconductor gas sensors operating under UV irradiation have been validated for detection of variety of chemicals in wide ranges of concentrations at room temperature. This article reviews recent advances in UV-activated metal oxide gas sensors in general and outlines the operating principles and sensing performance of UV-LED based sensors in particular. The sensing properties of several metal oxide semiconductors such as ZnO, TiO2, SnO2, In2O3, and metal oxide composites under UV-LED irradiation are individually presented and their advantages and shortcomings toward various gases are compared. Moreover, it is demonstrated that for the UV-LED based gas sensors, the performance can be improved by optimizing the sensor platform design and UV source parameters such as wavelength and power intensity. Further, it is illustrated that the gas sensing selectivity can be tuned by modifying the semiconductor layer structure or adjusting appropriate wavelength to an optimal value.
Espid et al. (Thu,) studied this question.
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