Present-day multimedia strongly relies on re-writable phase-change optical memories. We find that, different from current consensus Ge 2 Sb 2 Te 5 (GST), the material of choice in digital versatile discs–random access memory (DVD-RAM), possesses a structure similar to ferroelectric GeTe, namely that Ge and Sb atoms are located off-center giving rise to a net dipole moment. Amorphisation of both GeTe and GST results in a significant shortening of covalent bonds and a decrease in the mean-square relative displacement concomitant with a drastic change in the short-range order. We demonstrate that the order-disorder transition in GeTe and GST is primarily due to a flip of Ge atoms from an octahedral position into a tetrahedral position without rupture of strong covalent bonds. It is this nature of the transformation that ensures large changes in reflectivity, fast disk performance and repeatable switching over millions cycles.
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Kolobov et al. (2005) studied this question.
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