Kevlar-based laser-induced graphene memristors and its relevant applications

Memristors, as key devices for compute-in-memory, are increasingly explored for flexible and wearable applications. The one-step fabrication of Al/laser-induced graphene (LIG)/Al memristor with flexibility and artificial synapse functionality on Kevlar through laser-induced technology has been demonstrated in this paper. The Kevlar-based LIG memristor features multi-level resistance switching, reproducible resistive switching over the measured 270 cycles, and a relatively large ON/OFF ratio of about 70, higher than that of some previously reported polyimide-based LIG memristors. In addition, the Kevlar-based LIG memristor demonstrates synaptic functions, including paired-pulse inhibition, dynamic synaptic response, and long-term potentiation/depression. The device still exhibits distinguishable resistive switching characteristics after 100 days under plastic encapsulation. Furthermore, by integrating the memristor with an LIG pressure sensor, an adjustable-threshold sensory response is realized. These results suggest the Kevlar-based LIG memristor as a multifunctional device that not only integrates resistive switching, synaptic functionality, and threshold sensing but also retains distinguishable switching characteristics under the tested storage conditions, making it attractive for intelligent protective clothing and flexible electronics.