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We newly developed a highly reliable 100 nm thick MOCVD PZT technology and a novel direct cell via technology applicable to fully logic compatible sub 10F/sup 2/ cell embedded FRAM. A 2Pr value of 40 uC/cm/sup 2/ at 1.6V was obtained on our one-mask etched new PTO seeded 100 nm thick MOCVD PZT capacitor. Capacitor degradation that could occur upon a direct application of metal on capacitor through direct via was completely prevented by combining a novel TiN-plug scheme and a diffusion barrier metal technology, which greatly improves the interface properties between top electrode and PZT. Finally, a highly reliable, 1.6V operational, sub 10F/sup 2/ cell FRAM has been successfully embedded into experimental 0.18 /spl mu/m logic with only two additional FRAM masks by successfully implementing the above two key technologies.
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Park et al. (2005) studied this question.