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Growth of AlScN high‐electron‐mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low vapor pressure of the conventionally used precursor tris‐cyclopentadienyl‐scandium (Cp 3 Sc). It is shown that the electrical and structural characteristics of the AlScN/GaN heterostructure improve significantly by using bis‐methylcyclopentadienyl‐scandiumchloride ((MCp) 2 ScCl), which has a higher vapor pressure and allows for an increased molar flow and thus higher growth rate (GR). AlScN/GaN HEMT heterostructures with superior electrical characteristics deposited at different barrier growth temperatures are presented. The sheet resistance of 172 Ω sq −1 obtained at 900 °C barrier growth temperature is among the lowest reported so far for AlScN/GaN HEMT structures. The sheet charge carrier density is and the electron mobility μ is 1124 cm 2 Vs −1 .
Streicher et al. (Wed,) studied this question.