Demonstrates thickness-dependent electrical behavior in multilayer MoS2 transistors, suggesting a new method for classification.
Single-Flake Transistor In the Research Article (DOI: 10.1002/adfm.202532204), Yongwoo Lee, Haksoon Jung, Jimin Kwon, and co-workers demonstrate that 3-8 layer MoS2 flakes can be reliably classified using pixel intensity contrast in the red, green, and blue optical channels. This approach enables large-scale correlation between optically identified layer number and electrical characteristics, providing a foundation for statistically resolving thickness-dependent electrical behavior in 2D transistors using extensive device datasets.
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Lee et al. (2026) studied this question.
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