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We present the design and measured results of a fully integrated Ka-Band front end on a 0.15-µm GaAs pHEMT process. The integrated front end includes a three stage power amplifier, three stage low noise amplifier, and single pole, double throw switch. The integration of the front end is a crucial step to commercialize mm-Wave technology for 5G mobile communication. In addition to the fully integrated front end module, these three components were fabricated separately for individual characterization and analysis, and those results are presented in this paper.
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Curtis et al. (2016) studied this question.
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