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As an exemplary member of the MXene family belonging to the class of two-dimensional materials, titanium carbide (Ti3C2Tx) MXene stands bright and is explored owing to its exceptional tunable properties. The full ambient oxidation of MXene in a spectrum of varying elevated temperatures toward the application of memristor devices is reported for the first time in this work. A Ti3C2Tx MXene free-standing film is oxidized in air from the temperature of 100 to 700 °C upon which the MXene completely transforms into the TiO2 film yet retaining its free-standing nature in the form of MXene-derived TiO2 films. Extensive surface, morphological, and bulk characterizations, such as x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction, confirmed the increasing Ti–O and decreasing Ti–C bond strength amid increasing oxidation. Furthermore, exceptional resistance switching properties are unveiled employing these heated MXene devices in tri-layer memristors utilizing flexible reduced graphene oxide as electrodes. The memristor device utilizing Ti3C2Tx MXene heated at 700 °C exhibited outstanding performance compared to the other series of devices with low switching voltage, a high OFF/ON ratio of 102, cycle-to-cycle repeatability, and exceptional endurance of over 6000 cycles. This work on MXene-derived TiO2 free-standing films will lay open ways to obtain oxide based flexible electronic devices through easy fabrication methods along with the possible capability to mimic unmatched synaptic features.
Sattar et al. (Fri,) studied this question.