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The highly anisotropic material CsBi(4)Te(6) was prepared by the reaction of Cs/Bi(2)Te(3) around 600 degrees C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) A, b = 4.4025(1) A, c = 14.5118(3) A, beta = 101.480(1) degrees, V = 3250.75(11) A(3), and Z = 8. The final R values are R(1) = 0.0585 and wR(2) = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type Bi(4)Te(6) anionic layers and Cs(+) ions residing between the layers. The Bi(4)Te(6) layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) A. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CsBi(4)Te(6) can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. SbI(3) doping resulted in p-type behavior and a maximum power factor of 51.5 microW/cm.K(2) at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 microW/cm.K(2) at 151 K was obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi(4)Te(6) and comparisons to those of p-type.
Chung et al. (Sat,) studied this question.