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Summary Memory is of central importance to the research of high‐level cognitive behaviors of humans, where the plastic synapse contributes to the memory formation. Due to the controllable conductance and high‐density integration, the memristor acts as a promising candidate of artificial synapse. In terms of memory retention time, memory contains short‐term memory (STM) and long‐term memory (LTM). Additionally, the STM can be changed to the LTM via repeated learning, and this process is called memory consolidation. A threshold‐type memristor combined with basic operational circuits is used to design a memory circuit that can emulate various memory hierarchy levels containing the STM, the LTM, and the STM‐to‐LTM transition. Threshold firing behavior can also be emulated because of the threshold characteristic of the memristor. Furthermore, a floating emulator circuit that consists of several off‐the‐shelf devices is developed to mimic the electrical behaviors of the threshold‐type memristor, and its hardware circuit implementation is presented. Finally, both simulation and experimental results validate the feasibility and effectiveness of the proposed memory circuit.
Li et al. (Mon,) studied this question.