Key points are not available for this paper at this time.
Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ∼10 kA/cm2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100°C.
Blokhin et al. (Wed,) studied this question.