ABSTRACT Membrane III‐V integration has shown great promise for advancing silicon (Si) photonics. In this work, we present lateral p–i–n InP/InGaAs membrane photodetectors (PDs) epitaxially grown on Si in a vertical configuration that mirrors the geometry used in heterogeneous bonding. The membrane PDs are realized in a single epitaxial step via in‐plane, in situ doping. The devices show sub‐200 nA dark current (10 µm length), a small‐signal 3‐dB bandwidth of 24 GHz, and clear non‐return‐to‐zero on–off keying (NRZ‐OOK) eye diagrams at 50 Gb/s, with eyes still measurable at 60 Gb/s. By reproducing the bonded vertical III–V/Si stack by epitaxy, the approach demonstrated here for PDs can also be extended to future hybrid Si‐cavity device implementations, such as hybrid III–V/Si lasers, within a monolithic epitaxial III–V/Si platform.
Yan et al. (Sun,) studied this question.