Key points are not available for this paper at this time.
High-performance thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (IGZO) /Ga2O3 heterojunction and the reference TFTs with single-layer IGZO, Ga2O3, and stacked IGZO/Al2O3 layers are fabricated by sputtering. The as-deposited IGZO/Ga2O3 TFT shows high ON current of 0. 97\, \, A m^-{1} at a drain voltage of 1 V, which is 7 orders of magnitude higher than that of the reference single layer TFTs and high mobility of 22. 2 cm ^{2} V^-{1} s^-{1}, which is twice of that of the reference as-deposited IGZO/Al2O3 TFT (11. 5 cm ^{2} V^-{1} s^-{1}). Combining such superior conductivity of the IGZO/Ga2O3 TFT with the energy-level alignment, it indicates quasi-two-dimensional electron gas existed at the interface originated from the electrons confined in the potential well of IGZO. After annealing in air atmosphere, the IGZO/Ga2O3 TFT shows an effective gate modulation with high current ON/ OFF ratio of 1. 2 \, \, 10^{7} and high mobility of 15. 8 cm ^{2} V^-{1} s^-{1} comparing with that of the reference annealed IGZO/Al2O3 TFT (11. 5 cm ^{2} V^-{1} s^-{1}). In addition, the bias stability of the annealed IGZO/Ga2O3 TFT is enhanced due to the interface passivation. Our results indicate that amorphous IGZO/Ga2O3 heterostructure is an effective way to achieve high-mobility and stable TFTs, which have great potential in low-cost, large-area, and flexible high-definition displays.
Ji et al. (2022) studied this question.