Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm

We demonstrated amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) with extremely scaled channel thickness t a-IGZO of 3.6 nm, achieving low SS of 74.4 mV/decade and the highest μ eff of 34 cm 2 /V·s at carrier density N carrier of ~5 × 10 12 cm -2 for a-IGZO TFTs having sub-10 nm t a-IGZO . We found that there is no obvious degradation of mobility as t a-IGZO changes from 6 nm to 3.6 nm. By scaling down the channel length LCH to 38 nm, the devices have shown the highest extrinsic transconductance (G m ) of 125 μS/μm (at V DS of 1 V) and the highest on-state current I ON of 350 μA/μm at V GS -V T of 3.0 V and V DS of 2.5 V for any kind of a-IGZO TFTs.