Review summarizes advances in hafnium-based and 2D ferroelectric materials for non-volatile memories, indicating future directions.
Ferroelectric tunnel junctions (FTJs), which feature an ultrathin ferroelectric barrier sandwiched between two electrodes, have emerged as a promising candidate for next-generation non-volatile memories. This review focuses on two emerging material systems: CMOS-compatible hafnium-based ferroelectrics and two-dimensional (2D) van der Waals ferroelectrics (e.g., α-In₂Se₃, CuInP₂S₆, and h-BN). It summarizes the latest research progress and concludes by outlining the challenges and future research directions.
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Dong et al. (2026) studied this question.
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