Numerical Analysis and Simulation Approach of Copper Antimony Sulfide Based Thin Film Solar Cell with Dual Heterojunction

This paper presents a SCAPS-1D numerical investigation of a Copper Antimony Sulfide (CuSbS2)-based thin-film solar cell using a dual-heterojunction n-ZnSe/p-CuSbS2/p+-BMO structure. The influence of ZnSe window-layer thickness and ferroelectric BSF materials including BFO, BTO and BMO was evaluated under AM1.5G illumination using literature-based material parameters. Under the adopted idealized simulation conditions, the optimized BMO-based structure produced Voc = 1.257 V, Jsc = 46.819 mA/cm2, FF = 83.21% and PCE = 48.96%. Because this result is unusually high for a CuSbS2-based thin-film device, it is interpreted as a numerical upper-limit case that requires further validation using complete optical, recombination and experimental device analysis.