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Abstract Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development.
Guo et al. (Thu,) studied this question.