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Abstract The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In 2 Se 3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In 2 Se 3 based field-effect devices. Surface potential measurements of In 2 Se 3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.
Dutta et al. (Fri,) studied this question.